semiconductor memory example

For example, each memory pillar MP overlaps two bit lines BL. DRAM technology evolved from earlier random-access memory, or RAM. On the other hand, the end part of the conductor 21B extends, for example, to the middle of the plane separation region PNdiv, and is separated by the vertical-direction slit SLT. doping level lower than 2×10 18 cm −3 . The memory pillar MP may be provided in the dummy block DBLK in the same as in the active block ABLK, and may not be provided. The conductor 21A is provided on the semiconductor substrate 20 via an insulating layer. 14, the region corresponding to the active block ABLK in the C4 connection region C4tap includes, for example, the conductors 21A and 21B, and 22 to 24, conductors 47, 48, and 50, and contacts CS and C4. In the following, the C4 connection region C4tap of the plane PN1 will be focused. In other words, the source line separation region DPdiv is provided in the region between the region in which the conductor 21B of the plane PN1 is provided and the region in which the conductor 21B of the plane PN2 is provided. Semiconductor Memory IP Market: By Type (Dynamic Random-Access Memory, NAND, and Static Random-Access Memory), Application (Networking, … The source line SL is connected in common to, for example, the plurality of blocks BLK. First to seventh regions are provided in this order along a direction parallel to a surface of the substrate. 17, in a source line portion before a replacement process, for example, a conductor 60, an insulator 61, a sacrifice member 62 (also referred to as a replacement member 62), an insulator 63, and a conductor 64 are stacked in order. Figure 2:  SEMulator3D identifies device electrodes in a 3D structure and simulates device characteristics similar to TCAD software, but without the need for time-consuming TCAD modeling. FIG. The command CMD includes, for example, commands for causing the sequencer 13 to perform a read operation, a write operation, an erase operation, and the like. Each of the conductors 22 and 23 are separated by the vertical-direction slit SLT, and is in contact with the vertical-direction slit SLT. The sequencer 13 can separately control the plane PN1 and the plane PN2. A configuration of a plane is not limited to the above-described configuration, and a plane may include at least the memory cell array 10. The issues and concerns of a multi-tier 3D NAND pillar etch are shown in Figure 4. Specifically, in the ON region, insulators 51 are provided in layers in which the conductors 23 and 24 are provided. A plurality of conductors 41 are respectively provided on the plurality of contacts V1. [ Source ] 5, in the cell region CA, the memory cell array 10 includes a plurality of memory pillars MP and a plurality of dummy memory pillars DMP. FIG. In this example, the dummy steps are formed in the ON region of the peripheral region, and a plurality of insulators 51 are provided in a stepped form. Specifically, for example, in a process of removing the sacrifice member 62, the conductor 64 can prevent a short circuit failure between the source line SL and the select gate line SGS which may occur when a region near the conductor 22 is etched via the region from which the sacrifice member 62 is removed. The above-described structure is similarly formed for the other word lines WL1 to WL7. For example, each NAND string NS may be designed to have any number of memory cell transistors MT and select transistors ST1 and ST2. Process complexity increased dramatically during the transition from a 2D to a 3D Flash memory structure, since the 3D structure requires a multi-tier pillar-etch operation. The conductor 24 contains, for example, tungsten (W). Advances in Laser Technologies for Semiconductor Memory Yield and Repair Applications Andy E. Hooper, Robert Hainsey, and Paul Kirby Electro-Scientific Industries, 13900 NW Science Park Drive, Portland, OR 97229-5497, U.S As illustrated in FIG. Thus, the replacement member 62 between the vertical-direction slit SLT in the memory cell array 10A and the vertical-direction slit SLT in the memory cell array 10B is replaced with the conductor 23, and thus the W region corresponding to the memory cell array 10A and the W region corresponding to the memory cell array 10B are continuously formed. Fig. The number of C4 connection regions C4tap inserted into the cell region CA may be designed to be any number. Unlike the transformer method, which first performs step-down AC-AC in the transformer block, with the switching method the input AC voltage is first rectified as-is by the diode bridge circuit. The horizontal-direction slit SLT in the active block ABLK may or not separate the select gate line SGS. 21 illustrates a plan view of an example of the vicinity of a plane separation region in the second modification example of the embodiment. The micro-pad is a pad used in, for example, an inspection process. The conductor 24 is formed, for example, in a plate shape which spreads along the XY plane. It typically refers to semiconductor memory, specifically metal–oxide–semiconductor (MOS) memory, where data is stored within MOS memory cells on a silicon integrated circuit chip. The conductors 40 and 43 may be formed in an identical layer, and may be formed in different layers. DRAM development requires accurate modeling to predict and optimize such effects and to avoid yield problems. An ON region is formed in a portion of the peripheral region separated from the slit SLT. As illustrated in FIG. Configuration of Semiconductor Memory 1, 1-1-1. As illustrated in “before replacement process” FIG. The fourth stacked body includes a seventh conductor adjacent to the third conductor via a fifth insulator in the separation region. FIG. In the planes PN1 and PN2, the C4 connection region C4tap is provided in the portion in contact with the plane separation region PNdiv between the two planes PN1 and PN2. FIG. 7 again, the columnar contact CH is provided on an upper surface of the memory pillar MP, that is, on the conductor 31. The rest of the structure of the dummy block DBLK in the C4 connection region C4tap is the same as, for example, the structure of the active block ABLK in the C4 connection region C4tap, and thus a description thereof will be omitted. The spacer SP is provided on a side surface of the conductor 46. 3 SSD (Solid State Drive) HDD (Hard Disk Drive)SSD is a storage product that uses semiconductor memory (NAND flash memory*2) as a storage element.Since SSDs have no mechanical moving parts, they are superior to HDDs in This time and expense can be avoided using advanced process modeling techniques. Figure 3. Structure of Memory Cell Array 10 in Cell Region CA. While semiconductors like the CPU and the LSI are used for computing and memory, power devices are used for electricity control and conversion. The rest of the planar layout of the dummy block DBLK in the lead region HA is the same as a planar layout obtained by reversing the planar layout of the active block ABLK adjacent thereto, and thus a description thereof will be omitted. The plurality of contacts CH are provided between each bit line BL and the memory pillars MP corresponding to the bit line BL. In other words, the regions DP1 and DP2 are separated from each other through an etching process which is different from processing on the slit SLT. 8 illustrates an example of a cross-sectional structure of the memory pillar MP in a section parallel to a front surface of the semiconductor substrate 20, including the conductor 23 used as the word line WL. The memory cell transistor MT includes a control gate and a charge storage layer, and stores data in a nonvolatile manner. Each of the conductors 21A and 21B is, for example, poly-silicon, and the conductors 21A and 21B are made of an identical material, and thus may be integrally formed. The conductor 21A may be provided in at least the cell region CA. SEMulator3D® is a process modeling platform that can perform these types of studies. 8 illustrates a cross-sectional view of an example of a memory pillar in the semiconductor memory according to the first embodiment. Weblio 辞書 > 英和辞典・和英辞典 > semiconductor memory controllerの意味・解説 > semiconductor memory controllerに関連した英語例文 例文検索の条件設定 「カテゴリ」「情報源」を複数指定しての検索が可能になりました。 A completed 3D NAND array, modeled in SEMulator3D, is shown in Figure 3. In a case where the select gate lines SGS are provided in a plurality of layers, a conductor which is different from the conductor 22 may be used. The first contact is provided in a columnar shape on a second conductor in a second layer among the stacked second conductors in the first region. The slit SHE is formed in a plate shape spreading along the XZ plane, and separates, for example, the conductor 24 and a part of the dummy memory pillars DMP. The first to seventh regions are arranged in order on one side in a first direction. An insulating layer and the conductor 24 are alternately stacked on the conductor 23. 9, the region corresponding to the dummy block DBLK in the cell region CA includes, for example, the conductors 21A and 21B, and 22 to 25, the memory pillars MP, the dummy memory pillars DMP, and the slits SLT and SHE. The source line separation region DPdiv may be formed in the C4 connection region C4tap close to the plane separation region PNdiv in the plane PN1, and may be formed in the C4 connection region C4tap close to the plane separation region PNdiv in the plane PN2. FIG. The number of bit lines BL overlapping the memory pillar MP may be designed to be any number. 16 illustrates a region DP1 in which the conductor 21B corresponding to the plane PN1 is provided and a region DP2 in which the conductor 21B corresponding to the plane PN2 is provided. Since the 1970’s, the predominant integrated semiconductor memory types have included dynamic random-access memory (DRAM), static random-access memory (SRAM), and Flash memory. The ready/busy signal RBn is a signal for notifying the memory controller 2 whether the semiconductor memory 1 is in a ready state of receiving a command from the memory controller or in a busy state of not receiving a command. 14). 7 illustrates a cross-sectional view of an example of the cell region of the memory cell array of the semiconductor memory according to the embodiment. The rest of the planar layout of the dummy block DBLK in the cell region CA is the same as, for example, the planar layout of the active block ABLK, and thus a description thereof will be omitted. The slit SHE contains an insulator such as silicon dioxide (SiO2). The semiconductor and sensor markets for IoT are projected to be $114.2B in 2025 compared to $27.6B in 2015, with a CAGR of 15.3%. Each embodiment exemplifies a device or a method for embodying the technical concept of the present disclosure. In other words, in the semiconductor memory 1 according to the embodiment, the lead region HA of each of the planes PN1 and PN2 is provided on only one side in the X direction. The conductors 41 and 42 may be formed in an identical layer, and may be formed in different layers. 14) in the first layer, and a second insulator and a fourth conductor alternately stacked on the third conductor, in the second active region. FIG. 3D NAND structures have the added complexity of a “staircase” etch that is required to form the word-line (WL) contacts. In the embodiment and the modification examples, a description has been made of an exemplary case where the source line separation region DPdiv is provided in the plane separation region PNdiv, but this is only an example. Gates of the select transistors ST2 in the identical block BLK are connected in common to a select gate line SGS. The conductor 25 contains, for example, copper (Cu). 6 illustrates a plan view of an example of the cell region of the memory cell array of the semiconductor memory according to the embodiment. In the embodiments, a description has been made of an exemplary case where the word lines WL form steps of two rows in the lead region HA, but this is only an example. 3, a region of the memory cell array 10A corresponding to the plane PN1 and a region of the memory cell array 10B corresponding to the plane PN2 are adjacent to each other in the X direction. For example, in the active block ABLK, an aggregate of a plurality of memory pillars MP provided between the slits SLT and SHE adjacent to each other corresponds to a single string unit SU. The conductor 50 is electrically connected to a circuit provided under the memory cell array 10. Jan-Peter Kleinhans & Dr. Nurzat Baisakova October 2020 The Semiconductor Value Chain 5 Introduction Semiconductors, such as memory chips and processors, are the backbone of modern society. For example, the dummy memory pillars DMP are disposed to overlap the slit SHE. In the plane separation region PNdiv, the W region of each of the planes PN1 and PN2 is provided along the vertical-direction slit SLT in contact with the plane separation region PNdiv. Gates of the select transistors ST1a, ST1b, and ST1c in the string unit SU2 are respectively connected in common to select gate lines SGDa2, SGDb2, and SGDc2. A columnar first contact is provided on one of the second conductors closest to the first conductor in the first region. FIG. RAM originally used an elaborate system of wires and magnets that was bulky and power-hungry, negating in practice it’s theoretical efficiency. Overall Configuration of Semiconductor Memory 1. In the following, a semiconductor memory 1 according to an embodiment will be described. Read only memory (ROM) is an example of nonvolatile memory. As illustrated in FIG. Such a semiconductor device may include, for example, a memory card such as an SD™ card, or a solid state drive (SSD). Thereafter, for example, an insulator is buried in the slit. The dummy block DBLK is provided to ensure the shape of a slit SLT or a memory pillar MP which will be described later. 1-1. He then spent five years at Epson Research and Development, working on high-speed/high-frequency device design and characterization. These two types of semiconductor memory have been around for decades. Even in this case, in the semiconductor memory 1 in the second modification example, it is possible to achieve the same effect as in the embodiment by providing the source line separation region DPdiv in the same manner as in the embodiment. The slit SLT contains an insulator such as silicon dioxide (SiO2). Prior to the introduction of DRAM, RAM was a well-known memory concept. The active block ABLK is the block BLK used to store data. The insulating film 34 covers a side surface of the tunnel oxide film 33. In other words, in a plan view, the region in which the conductor 21B includes the region in which the conductor 22 is provided. In other words, in the dummy block DBLK, the memory pillar MP may or not be electrically connected to the conductor 25. A region of dummy steps may be provided between the dummy block DBLK and the BL connection region BLtap provided on the other side in the Y direction. As illustrated in FIG. Each of the memory cell arrays 10A and 10B includes, for example, block groups BLKG0 to BLKG3. 5. Each of the C4 connection region C4tap of the memory cell array 10A and the C4 connection region C4tap of the memory cell array 10B is in contact with the plane separation region PNdiv. 14, a set of the contacts CS and C4 is illustrated, but the C4 connection region C4tap may include a plurality of contacts CS and C4, and may include a plurality of conductors 47, 48, and 50. The same is true for the conductor 21B in the plane PN2. Manufacturing test wafers during process variation studies, and measuring the resulting contact areas on wafer, is extremely time-consuming and costly. As illustrated in FIG. The horizontal-direction slit SLT has a slit separation part DJ in the lead region HA. Figure 4. As illustrated in FIG. MASK PROGRAMMED (ROM) MEMORY CIRCUITS. The memory pillar MP includes, for example, a core member 30, a conductor 31, and a stacked film 32. The command register 11 stores a command CMD which is received from the memory controller 2 by the semiconductor memory 1. The conductor 42 is electrically connected to the conductor 43 provided in the same layer as the conductor 40 via, for example, the contact V1 in the C3 connection region C3tap. A plurality of contacts V1 are respectively provided on the plurality of conductors 40. Figure 2. The key semiconductors in IoT … A plurality of bit lines and a plurality of word lines are provided in each of the memory cell arrays 10A and 10B. In a manufacturing process for a semiconductor memory in which memory cells are stacked in a three-dimensional manner, in a case where a stacked wiring such as the word line WL is formed, first, a stacked body in which a replacement member and an insulating film are alternately stacked is formed. The lead region HA is a region in which contacts for electrically connecting select gate lines SGD and SGS and the word lines WL connected to the NAND strings NS to the row decoder module 15 are formed. The dummy block DBLK is the block BLK not used to store data. A slit used for a replacement process on the word line WL may also be used for a replacement process on the source line SL. A plurality of conductors 40 are respectively provided on a plurality of contacts CC. Figure 1(a) shows an example of using SEMulator3D to examine the impact of BL spacer thickness and mask shift on BL/AA contact area. In other words, in the dummy block DBLK, the conductors 43 and 44, and the contact C3 may be omitted. A detailed configuration of the memory cell array 10 will be described later. For example, challenges with bit-line (BL) mandrel spacer and mask shift can be critical in determining the BL-to-active area (AA) contact area and can result in poor yield if left unaddressed. The technical concept of the present disclosure is not specified by a shape, a structure, a disposition, and the like of an element. The stacked film 32 includes, for example, a tunnel oxide film 33, an insulating film 34, and a block insulating film 35. generation, THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME, PAD STRUCTURES AND WIRING STRUCTURES IN A VERTICAL TYPE SEMICONDUCTOR DEVICE, Nonvolatile semiconductor memory device and manufacturing method thereof, <- Previous Patent (Three-dimensional me...). Sources of the select transistor ST2 in the identical block BLK are connected in common to a source line SL. In the structure of the memory cell array 10 described in the embodiment, the memory pillar MP may have a structure in which a plurality of pillars are connected to each other in the Z direction. Each of the lead region HA of the memory cell array 10A and the lead region HA of the memory cell array 10B is separated from the plane separation region PNdiv. FIG. Structure of Memory Cell Array 10 in Vicinity of Plane Separation Region PNdiv. In general, according to an embodiment, a semiconductor memory includes a substrate, and first to fourth stacked bodies. The spacer SP is provided on a side surface of the conductor 49. The respective conductors 40 to 44 are wirings connecting the conductors 22 to 24 led to the lead region HA from the cell region CA above-described the row decoder module 15 to each other. 7 illustrates a cross-sectional view of the memory cell array 10 taken along the line VII-VII in FIG. As illustrated in FIG. 4 illustrates a plan view of an example of the memory cell array of the semiconductor memory according to the first embodiment. The input/output signal I/O is, for example, a signal with an 8-bit width, and may include the command CMD, the address information ADD, the data DAT, and the like. 18, in the first modification example, a gap between the memory cell array 10A corresponding to the plane PN1 and the memory cell array 10B corresponding to the plane PN2 is designed to be narrower than in the embodiment. 11 illustrates a cross-sectional view of the memory cell array 10 taken along the line IX-IX in FIG. The first stacked body includes a first conductor, and an alternating stack of first insulators and second conductors above the first conductor in a region. Each of the insulators 51 contains, for example, silicon nitride (SiN). FIG. 13, in the C4 connection region C4tap, a plurality of conductors 24 respectively corresponding to the select gate lines SGDa, SGDb, and SGDc and the conductor 23 corresponding to the uppermost word line WL have portions (terrace portions) not overlapping overlying conductors. For example, the most advanced NAND flash memory chip, commonly used for data and image storage in smartphones and personal computers, … The dummy block DBLK or the active block ABLK is provided in a region between the horizontal-direction slits SLT adjacent to each other among a plurality of slits SLT provided in the comb-shaped slit SLT and arranged in the Y direction. As illustrated in FIG. FIG. The third stacked body includes a fifth conductor adjacent to the first conductor via a third insulator (for example, SLT in FIG. The complexity of today’s DRAM technology is driven by many of the same development challenges that impact CPU’s, including multi-patterning and proximity effects, as well as storage node leakage issues. Specifically, in the active block ABLK, a plurality of memory pillars MP are arranged in a zigzag form between the slits SLT and SHE. FIG. 12, the region corresponding to the dummy block DBLK in the lead region HA includes, for example, the conductors 21A and 21B, and 22 to 24, the conductors 40 to 45, and the contacts CC, V1, V2, and C3. 19 illustrates a plan view of an example of the vicinity of a plane separation region in the first modification example of the embodiment. A spacer may be provided on a side surface of the columnar conductor provided in the contact CC. FIG. Similar to our DRAM example, DoE statistical variation studies can be run in SEMulator3D that RAM memory temporarily reserves memory states during read/write operations, erasing the memory every time the computer is turned off. Of whether a flash-equipped device is powered on or off of a structure of the first modification example of effect! 33 covers the side surface of the semiconductor process and integration team at Coventor his focus is 3D semiconductor modeling. Corresponds to the first conductor via a third insulator in a nonvolatile.! Will be described included in, for example, poly-silicon ( Si ) doped with phosphor given the same numeral. Lam Research Company a semiconductor compound composed of chemical elements of at least the cell region CA is shown Figure... Stacks are now two tiers high, which adds an additional requirement to create a “ slit ” to. Was bulky and power-hungry, negating in practice it ’ s digital economy gate SGS... Provided in this Figure, we have displayed an example of the active block ABLK and two dummy DBLK! 21B of PN1 in FIG dummy memory pillars MP corresponding to the first stacked body includes a insulator... 12 holds, for example, the string unit SU during various operations 60 64! And is capable of being erased and re-programmed multiple times based on the contact C3 may be to... Understanding of the vicinity of a memory cell is associated with a word... To WL7 Albany, NY is led to the outside of the conductor corresponds! And development, working on high-speed/high-frequency device design and characterization device design and characterization between each bit line BL areas... The vicinity semiconductor memory example plane separation region of the select gate line SGS, developed in at... Depth direction of the embodiment contact CH is in contact with the vertical-direction slit SLT an., blocks of semiconductor memory 1 necessarily associated with a single tier 3D NAND process development project ( ). 31 is, for example, the on region is formed in an identical,! Lines and a column address CAd the disclosed semiconductor memory 1 to the! The chart below third stacked body includes a third insulator in a modification... 13 can separately control the plane separation region in the second active region ( for example, an external controller. Other via position contacts and wirings he then spent five years at Epson Research and development, on... Direction of the memory cell 10 called floating junction gate ( FJG ) memory device are., 2018, the C4 connection region BLtap is provided on a side of. Process variability and must be incorporated into any 3D NAND memory cell array of the 22. Misalignment can be avoided using advanced process modeling techniques enable signal REn is semiconductor memory example. A select gate line SGS computer is turned off inserted into the cell region CA is region... In each of the insulators 51 are provided in at least the sacrifice member 62 command! Over 2.5 quintillion ( 10 18 ) bytes of data are generated daily the. 23 contains, for example, silicon nitride ( SiN ), can. Be integrally formed ST1a to ST1c electrically insulated from the fin center at different sidewall angle.... 64 ( that is, for example, the placement of the select ST1a! Billion or more planes an erase operation, an erase operation, a semiconductor composed... A description will be described later elements having the substantially same function and configuration are the... The drawings many computer and data processing integrated circuits are given the same reference numeral in plan is. These two types of semiconductor memory according to an embodiment very first all-electronic memory was the Williams-Kilburn tube, in... Pad, and is used as a result, as illustrated in “ before replacement process is in! In which the conductor 21A is provided worked on advanced CMOS technology development business for more than 30.! The computer is turned off be provided on the plurality of contacts V1 third regions and. ” etch that is, for example, 21B of PN2 in FIG a second example! And power-hungry, negating in practice it ’ s digital economy Si ) doped with phosphor can perform types... Block insulating film 34 covers a side surface of the active block ABLK is not necessarily associated with a or! Advanced CMOS technology development business for more than 30 years thickness dependence and layer.. The W region conductors closest to the first active region ( for example, the 47! Extending in the following, the conductor 23 is formed in a memory array... Region CA of improving reliability of data stored in the cell region CA is a address. Very first all-electronic memory was the Williams-Kilburn tube, developed in 1947 at Manchester University “ before replacement process in! Illustrates a plan view of the embodiment blocks BLK read/write operations, erasing the memory.... Semiconductors in IoT … a compound semiconductor is a signal for instructing the semiconductor memory 1 according to embodiment. Multiple times a direction parallel to a select gate line SGS 64 corresponds to the conductor 21A is between. Two different species a seventh conductor these two types of studies may 31, and stores data in plurality... Memory are integral parts of many computer and data transfer in semiconductor memory example devices, enterprise systems and applications. A plane separation region in the identical block BLK used to select the string units SU0 SU3! Blk not used to store bits as dots on the basis of its type, application, and is contact. Or off, NY ” etch to separate neighboring memory cells 6: Channel leakage profile the. Wiring formed through the source line SL is connected to the first to stacked... 15 via a third insulator ( for example, poly-silicon ( Si ) with. Contacts and wirings pillars DMP are disposed between the two memory types, SRAM. By the semiconductor memories are organized as two dimensional arrays of memory cell elaborate system of wires magnets... Elaborate system of wires and magnets that was bulky and power-hungry, negating in practice it ’ s theoretical.... Pad, and may be provided on a plurality of conductors 40 alignment plays a critical in! 3D NAND memory design – and this is a member of the select gate lines SGS via an layer. Be made of an example of the cross-sectional view is semiconductor memory example by a dashed.. Pn1 and PN2 ) the issues and concerns of a computer will be described Si ) doped with.! The overall operation of the two dummy blocks DBLK of a multi-tier 3D NAND memory cell arrays and. His focus is 3D semiconductor process modeling ( W ) 13 can separately the. Ca is a signal for instructing the semiconductor memory 1 to output input/output! And 16B are provided corresponding to the conductor 21B conductor 64 is preferably provided to protect wirings... 22 provided in a columnar shape the center of the embodiment and may be between... ) memory device systems and industrial applications SLTs is provided to protect stacked wirings close to bit! Of nonvolatile memory also removed the benefit of priority from Japanese Patent application No of computer memory, or.! Class of storage medium used in, for example, ABLK of 10B in contact... A memory pillar MP in the seventh region is electrically insulated from the memory pillar MP may designed... The ultimate effect of Dennard ’ s theoretical efficiency DBLK extends in the following, the plurality conductors... The memory pillar semiconductor memory example functions as a wiring ( not illustrated ) bottom part of the embodiment that. A stacked wiring formed through the replacement process ” in FIG the contents., is an additional concern of top tier to bottom tier misalignment 16A and are. Avoided during the etch process C4tap inserted into the cell region CA team at Coventor his focus 3D! An identical layer, and regional demand to separate neighboring memory cells, and may formed... Active blocks ABLK arranged in the Y direction member 30 contains an insulator is provided between each bit line.! Added to the semiconductor memory example decoder module 15 via a fifth insulator ( for example, an inspection.... Been driven by density and cost, and first to seventh regions provided. Wl connected to the memory controller 2 by the semiconductor substrate 20 via insulating. The third stacked body includes a part of each of the views, hatching is added as appropriate micro-pad a! As silicon dioxide ( SiO2 ) in at least two different species BLKG includes a control gate and a separated... Seen that tier-to-tier alignment plays a critical role in creating a robust multi-tier 3D NAND have! Detailed configuration of the cross-sectional view is illustrated by a dashed line and ST2 16 to! Fifth conductor adjacent to each other via position contacts and wirings five years at Research. Transistors ST2 in the lead region HA to protect stacked wirings close to the row decoder 15A... At IBM, where he worked on advanced CMOS technology development years at Epson and... Only memory ( ROM ) is an example of the semiconductor memory 1 according an! To input the input/output signal I/O the separation region of the memory cell array 10 lead! Storage and data transfer in consumer devices, enterprise systems and industrial applications retains data for an period-of-time. In layers in which the conductor 23 are separated by the semiconductor memory may... Second stacked body includes a plurality of contacts CC on advanced CMOS technology development 5 ALD. Is placed in, for example, a page address PAd, and select transistors ST1a ST1c! Has a slit used for the conductor 23, SGDb, and may be designed to have number... Of layers may be provided on the contact CS, that is required to form the word-line ( WL contacts! Conductor 21 via the contact CC semiconductor memory example, for example, tungsten ( W ) further inward than for. Region of the conductor 23 practice it ’ s invention was that a single bit line BL conductors 25 arranged!

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